| PART |
Description |
Maker |
| KM29V16000ARS |
2M X 8 BIT NAN FLASH MEMORY
|
Samsung semiconductor
|
| TC58DVM92A1FT00 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
| MX66U51235FMI10G MX66U51235FZ4I10G |
1.8V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND01G-B2B NAND01GR3B2CN6E NAND02GR3B2CN6E NAND01 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| V23838-M305-M56 |
Transceivers by Form-factor MSA - SFP Multimode 850 nm; 2.125/ 1.062 Gbit/s FC; 1.25 Gbit/s GBE; LC Connector
|
Infineon
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| 5962-8766505YA 5962-8766503YA 5962-8766507UA 5962- |
Complete High-Speed CMOS, 12-Bit ADC
CMOS, 8-Bit-Compatible, 12-Bit DAC
CMOS 12-Bit Buffered Multiplying DACs
16-Bit Microprocessor 16位微处理
|
Electronic Theatre Controls, Inc.
|
| H27UAG8T2A |
16 Gbit (2048 M x 8 bit) NAND Flash
|
Hynix
|
